资 源 简 介
The goal of this book is to introduce the simulation methods necessary to describe
the behaviour of semiconductor devices during an electrostatic discharge (ESD).
The challenge of this task is the correct description of semiconductor devices under
very high current density and high temperature transients. As it stands, the book
can be no more than a snapshot and a summary of the research in this field
during the past few years. The authors hope that the book will provide the basis
for further development of simulation methods at this current frontier of device
physics.